1. Germanium dioxide is used as a germanium supplement in some questionable dietary supplements and "miracle cures".

2. Junction field effect transistors in germanium and silicon-germanium alloys and method for making and using

3. Germanium tetrachloride is an intermediate for the purification of germanium metal or its oxide, GeO2.

4. Germanium tetrahydride (CAS RN 7782-65-2)

5. Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium

6. The relaxed silicon germanium structure (54) further comprises a silicon germanium layer (54) has less than about 10. sub.7 threading dislocations per square centimeters.

7. Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys

8. Semiconductor device having germanium active layer with underlying diffusion barrier layer

9. In some embodiments, the diode comprises germanium or a germanium alloy, which can be deposited and crystallized at relatively low temperatures, allowing use of aluminum or copper in the conductors.

10. In preferred embodiments of the memory cell, a semiconductor junction diode formed of germanium or a germanium alloy which can be crystallized at relatively low temperature is formed disposed between conductors.

11. An argon atmosphere is also used for growing crystals of silicon and germanium.

12. A first silicon-germanium alloy layer is formed on a semiconductor substrate including silicon.

13. Scientists exploited silicon–germanium (SiGe) alloys to produce novel photodetectors and other electro-optical devices.

14. A germanium active layer is disposed above the substrate, underneath the gate electrode stack.

15. Light-stable semiconductor material based on amorphous germanium and process for manufacturing it

16. So there is a shortage of electrons compared to the germanium; thus a “hole” exists.

17. In nature, you can find germanium in few minerals like argyrodite, Briartite, germanite and renierite

18. In an advantageous embodiment, the substrate comprises single-crystal silicon including one or more insulated gate field effect transistors (IGFETs), and/or capacitors, and the photoresponsive element comprises germanium and/or germanium alloy epitaxially grown from seeds on the silicon.

19. Palladium alloy containing gold, silver, gallium, germanium and/or lithium and dental restorations utilizing same

20. A procedure is described for the spectrophotometric determination of germanium using phenylfluorone in a sulphuric acid medium.

21. Renierite and Briartite are very rare complex germanium sulfosalts, rare species for which Tsumeb is renowned

22. It was a true answer, for all statements made by England Culminated in the one sentence germanium esse delendam

23. The resulting mixture is fractionally distilled to purify and separate the germanium tetrachloride from other products and impurities.

24. Addition of germanium to the lipopolysaccharide sample resulted in more pronounced chemical shift changes toward lower field.

25. The novel organic germanium compounds of the present invention are remarkably improved in water solubility, thereby enabling easy in vivo absorption, is free from the accumulation in tissue, thereby showing no toxicity in the body, and can sufficiently show the original effect of germanium.

26. A method for annealing a diode formed of a silicon-germanium alloy that minimizes leakage current is disclosed.

27. Nevertheless, germanium, rubidium, selenium, silicon, tellurium, and several other elements can be substituted for caesium in photosensitive materials.

28. An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions.

29. Arsedine (English) Pronunciation IPA: /ˈɑːɹsədin/ Noun arseen (Afrikaans) Chemical element (As): previous germanium arseeni (Finnish) Noun arseeni arsenic Anagrams narisee

30. 20 An example of research with specific objectives might have been the measurement of the electrical conductivity of insulators like germanium.

31. As a first element, the chapter discusses Cu because this is the most notorious and best studied metal Contaminant in germanium.

32. Only a few minerals like argyrodite, Briartite, germanite, and renierite contain appreciable amounts of germanium, but there are none in mineable deposits

33. Germanium tetramethyl butenoxide Ge[OC(CH 3) 2 CH CH 2] 4, has been synthesized from germanium tetrachloride, methyl Butenol and triethylamine.Other methyl butenoxy derivatives of various elements, boron aluminium, titanium, alkyltin, niobium and tantalum have been prepared by the alcohol interchange of corresponding metal isopropoxides with methyl Butenol.

34. Fin field effect transistors can be formed on the at least one silicon-germanium alloy fin and the at least one silicon fin.

35. Today, germanium is often alloyed with silicon for use in very-high-speed SiGe devices; IBM is a major producer of such devices.

36. For instance, p-channel transistors may have a silicon/germanium alloy with a hexagonal shape thereby significantly enhancing the overall strain transfer efficiency.

37. The plasma synthesis method involves bombarding germanium metal with hydrogen atoms (H) that are generated using a high frequency plasma source to produce germane and digermane.

38. Briartite is an opaque iron-grey metallic sulfide mineral, Cu2GeS4 with traces of Ga and Sn, found as inclusions in other germanium-gallium-bearing sulfides

39. The Bege is designed with an electrode structure that enhances low energy resolution and is fabricated from select germanium having an impurity profile that improves charge collection (thus resolution and peak shape) at high energies

40. A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) are formed by patterning of a gate dielectric layer, a thin silicon layer, and a silicon-germanium alloy layer.

41. Germanium Biotite(GB), an aluminosilicate mineral containing 36 ppm Ge, was studied as a feed supplement and found to enhance immunological protection in mice and to effectively treat porcine reproductive and respiratory system virus (PRRSV)

42. A theoretical study is made of the photoconductivity of hot photoelectrons interacting with acoustic phonons in n-type germanium at low temperature, T = 4 K, when the equipartition of the energy of phonons is not obeyed.

43. Most commercial production of germanium is from treating flue-dusts of zinc- and copper-ore smelters, although a significant source is also found in the ash from the combustion of certain types of coal called vitrain.

44. A germanium- and/or carbon-containing silicon-alloy is applied to a substrate made, in particular, from silicon, in or on which a light-active material, for example, III-V semiconductor material, in particular, indium arsenide, is applied.

45. The Bege unit is designed with an electrode structure that enhances low energy resolution and is fabricated from select germanium having an impurity profile that improves charge collection (thus resolution and peak shape) at high energies

46. The new germanium Arsines GeHAsMe, (GeH)AsMe, (MeGe)AsMe, GeHAsPh, (GeH)AsPh, MeGeAs-Ph, (MeGe)AsPh, MeGe(AsMe), MeGe(AsMe), (MeGe)AsH, and MeGe(AsH) and the previously reported MeGeAsMe have been prepared by various methods

47. The invention further includes a monolithic three dimensional memory array of a plurality of p-i-n diodes, the p-i-n diodes being formed of a silicon-germanium alloy that have been subjected to a two-stage heating process.

48. By incorporating a diffusion hindering species (256A) at the vicinity of PN junctions of P-channel transistors comprising a silicon/germanium alloy, (255) diffusion related non- uniformities of the PN junctions may be reduced, thereby contributing to enhanced device stability and increased overall transistor performance.

49. Briartite is an opaque iron-grey metallic sulfide mineral, Cu 2 (Zn, Fe)GeS 4 with traces of Ga and Sn, found inclusions in other germanium-gallium-bearing sulfides. It is a mineral is basically composed of various elements in varying proportions

50. SemiConductor: [noun] any of a class of solids (such as germanium or silicon) whose electrical conductivity is between that of a Conductor and that of an insulator in being nearly as great as that of a metal at high temperatures and nearly absent at low temperatures.

51. Recent developments in the fields of thin film technology processes and silicon micromachining results in thermal sensors with astonishing specifications. Evaporated germanium thermistors placed on membranes of CVD silicon nitride which in turn are fixed at micromachined silicon substrates can act as extremely sensitive thermometers, IR radiation detectors, flow sensors for liquid and gaseous media and sensors for acoustic flow, for example.